Carrier capture at defects probed by deep-level transient spectroscopy is a nonradiative multiphonon electronic transition. Defects capture or emit carriers and change the charge state, so the initial and final states are associated with different equilibrium configurations, with a displacement \( \Delta Q \) along the configuration coordinate diagram, which is usually referred to as lattice relaxation. Under a single-phonon-mode approximation, with a vibrational frequency \( \omega \), the potential energy surfaces are constructed under the harmonic approximation, where \( U = \frac{1}{2}\omega^2 Q^2 \). The two potential energy surfaces are then separated by \( \Delta Q \) horizontally and by \( \Delta E \) vertically, where \( \Delta E \) is the defect transition energy associated with the defect level.
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